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| ?2002 fairchild semiconductor corporation sgh80n60ufd rev. b1 igbt sgh80n60ufd sgh80n60ufd ultrafast igbt general description fairchild's ufd series of insulated gate bipolar transistors (igbts) provides low conduction and switching losses. the ufd series is designed for applications such as motor control and general inverters where high speed switching is a required feature. features ? high speed switching ? low saturation voltage : v ce(sat) = 2.1 v @ i c = 40a ? high input impedance ? co-pak, igbt with frd : t rr = 50ns (typ.) absolute maximum ratings t c = 25 c unless otherwise noted notes : (1) repetitive rating : pulse width limited by max. junction temperature thermal characteristics symbol description sgh80n60ufd units v ces collector-emitter voltage 600 v v ges gate-emitter voltage 20 v i c collector current @ t c = 25 c80 a collector current @ t c = 100 c40 a i cm (1) pulsed collector current 220 a i f diode continuous forward current @ t c = 100 c25 a i fm diode maximum forward current 280 a p d maximum power dissipation @ t c = 25 c 195 w maximum power dissipation @ t c = 100 c78 w t j operating junction temperature -55 to +150 c t stg storage temperature range -55 to +150 c t l maximum lead temp. for soldering purposes,/8? from case for 5 seconds 300 c symbol parameter typ. max. units r jc (igbt) thermal resistance, junction-to-case -- 0.64 c / w r jc (diode) thermal resistance, junction-to-case -- 0.83 c / w r ja thermal resistance, junction-to-ambient -- 40 c / w applications ac & dc motor controls, general purpose inverters, robotics, and servo controls. g c e to-3p n g c e g c e
sgh80n60ufd rev. b1 sgh80n60ufd ?2002 fairchild semiconductor corporation electrical characteristics of the igbt t c = 25 c unless otherwise noted electrical characteristics of diode t c = 25 c unless otherwise noted symbol parameter test conditions min. typ. max. units off characteristics bv ces collector-emitter breakdown voltage v ge = 0v, i c = 250ua 600 -- -- v b vces / t j temperature coefficient of breakdown voltage v ge = 0v, i c = 1ma -- 0.6 -- v/ c i ces collector cut-off current v ce = v ces , v ge = 0v -- -- 250 ua i ges g-e leakage current v ge = v ges , v ce = 0v -- -- 100 na on characteristics v ge(th) g-e threshold voltage i c = 40ma, v ce = v ge 3.5 4.5 6.5 v v ce(sat) collector to emitter saturation voltage i c = 40a , v ge = 15v -- 2.1 2.6 v i c = 80a , v ge = 15v -- 2.6 -- v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz -- 2790 -- pf c oes output capacitance -- 350 -- pf c res reverse transfer capacitance -- 100 -- pf switching characteristics t d(on) turn-on delay time v cc = 300 v, i c = 40a, r g = 5 , v ge = 15v, inductive load, t c = 25 c -- 23 -- ns t r rise time -- 50 -- ns t d(off) turn-off delay time -- 90 130 ns t f fall time -- 50 150 ns e on turn-on switching loss -- 570 -- uj e off turn-off switching loss -- 590 -- uj e ts total switching loss -- 1160 1500 uj t d(on) turn-on delay time v cc = 300 v, i c = 40a, r g = 5 , v ge = 15v , inductive load, t c = 125 c -- 30 -- ns t r rise time -- 55 -- ns t d(off) turn-off delay time -- 150 200 ns t f fall time -- 160 250 ns e on turn - on switching loss -- 630 -- uj e off turn - off switching loss -- 940 -- uj e ts total switching loss -- 1580 2000 uj q g total gate charge v ce = 300 v, i c = 40a, v ge = 15v -- 175 250 nc q ge gate-emitter charge -- 25 40 nc q gc gate-collector charge -- 60 90 nc l e internal emitter inductance measured 5mm from pkg -- 14 -- nh symbol parameter test conditions min. typ. max. units v fm diode forward voltage i f = 25a t c = 25 c -- 1.4 1.7 v t c = 100 c -- 1.3 -- t rr diode reverse recovery time i f = 25a, di/dt = 200a/us t c = 25 c -- 50 95 ns t c = 100 c -- 105 -- i rr diode peak reverse recovery current t c = 25 c -- 4.5 10 a t c = 100 c -- 8.5 -- q rr diode reverse recovery charge t c = 25 c -- 112 375 nc t c = 100 c -- 420 -- sgh80n60ufd rev. b1 sgh80n60ufd ?2002 fairchild semiconductor corporation fig 1. typical output characteristics fig 2. typical saturation voltage characteristics fig 3. saturation voltage vs. case temperature at variant current level fig 4. load current vs. frequency fig 5. saturation voltage vs. v ge fig 6. saturation voltage vs. v ge 0 10 20 30 40 50 60 0.1 1 10 100 1000 duty cycle : 50% t c = 100 power dissipation = 60w v cc = 300v load current : peak of square wave frequency [khz] load current [a] 048121620 0 4 8 12 16 20 common emitter t c = 125 80a 40a i c = 20a collector - emitter voltage, v ce [v] gate - emitter voltage, v ge [v] 048121620 0 4 8 12 16 20 common emitter t c = 25 80a 40a i c = 20a collector - emitter voltage, v ce [v] gate - emitter voltage, v ge [v] 0306090120150 0 1 2 3 4 common emitter v ge = 15v 80a 40a i c = 20a collector - emitter voltage, v ce [v] case temperature, t c [ ] 0.5 1 10 0 20 40 60 80 100 120 common emitter v ge = 15v t c = 25 t c = 125 collector current, i c [a] collector - emitter voltage, v ce [v] 02468 0 50 100 150 200 250 20v 12v 15v v ge = 10v common emitter t c = 25 collector current, i c [a] collector - emitter voltage, v ce [v] sgh80n60ufd rev. b1 sgh80n60ufd ?2002 fairchild semiconductor corporation fig 7. capacitance characteristics fig 8. turn-on characteristics vs. gate resistance fig 9. turn-off characteristics vs. gate resistance fig 10. switching loss vs. gate resistance fig 11. turn-on characteristics vs. collector current fig 12. turn-off characteristics vs. collector current 11030 0 500 1000 1500 2000 2500 3000 3500 4000 4500 cres coes cies common emitter v ge = 0v, f = 1mhz t c = 25 capacitance [pf] collector - emitter voltage, v ce [v] 11080 20 100 1000 2000 toff tf tf common emitter v cc = 300v, v ge = 15v i c = 40a t c = 25 t c = 125 switching time [ns] gate resistance, r g [ ] 11070 20 100 500 common emitter v cc = 300v, v ge = 15v i c = 40a t c = 25 t c = 125 ton tr switching time [ns] gate resistance, r g [ ] 11080 100 1000 5000 eoff eon eoff common emitter v cc = 300v, v ge = 15v i c = 40a t c = 25 t c = 125 switching loss [uj] gate resistance, r g [ ] 10 20 30 40 50 60 70 80 10 100 500 ton tr common emitter v cc = 300v, v ge = 15v r g = 5 t c = 25 t c = 125 switching time [ns] collector current, i c [a] 10 20 30 40 50 60 70 80 20 100 1000 2000 toff tf toff tf common emitter v cc = 300v, v ge = 15v r g = 5 t c = 25 t c = 125 switching time [ns] collector current, i c [a] sgh80n60ufd rev. b1 sgh80n60ufd ?2002 fairchild semiconductor corporation 0.3 1 10 100 1000 0.1 1 10 100 500 single nonrepetitive pulse t c = 25 curves must be derated linearly with increase in temperature 50us 100us 1 ? dc operation i c max. (continuous) i c max. (pulsed) collector current, i c [a] collector-emitter voltage, v ce [v] fig 14. gate charge characteristics fig 15. soa characteristics fig 16. turn-off soa characteristics fig 13. switching loss vs. collector current 0 1020304050607080 10 100 1000 3000 eon eoff common emitter v cc = 300v, v ge = 15v r g = 5 t c = 25 t c = 125 switching loss [uj] collector current, i c [a] 0 30 60 90 120 150 180 0 3 6 9 12 15 300 v 200 v v cc = 100 v common emitter r l = 7.5 t c = 25 gate - emitter voltage, v ge [ v ] gate charge, q g [ nc ] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1e-3 0.01 0.1 1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse thermal response, zthjc [ /w] rectangular pulse duration [sec] pdm t1 t2 duty factor d = t1 / t2 peak tj = pdm zthjc + t c fig 17. transient thermal impedance of igbt 1 10 100 1000 1 10 100 500 safe operating area v ge =20v, t c =100 o c collector current, i c [a] collector-emitter voltage, v ce [v] sgh80n60ufd rev. b1 sgh80n60ufd ?2002 fairchild semiconductor corporation 100 1000 1 10 100 v r = 200v i f = 25a t c = 25 t c = 100 reverse recovery current, i rr [a] di/dt [a/us] 100 1000 0 200 400 600 800 1000 v r = 200v i f = 25a t c = 25 t c = 100 stored recovery charge, q rr [nc] di/dt [a/us] 100 1000 20 40 60 80 100 120 v r = 200v i f = 25a t c = 25 t c = 100 reverce recovery time, t rr [ns] di/dt [a/us] 1 10 100 0123 t c = 25 t c = 100 forward voltage drop, v f [v] forward current, i f [a] fig 19. reverse recovery current fig 18. forward characteristics fig 20. stored charge fig 21. reverse recovery time ?2002 fairchild semiconductor corporation sgh80n60ufd rev. b1 sgh80n60ufd mechanical dimensions dimensions in millimeters to-3pn !"#$ %"& '(% & % )'"% &' ! %*$%('( (! '&$$% "'+ '% ,'*- %& ''.$ '- '( $$ %+ !% !"'* %("& % % $% %( / 0 ! 11 2 2 34 5 1 23 45 11 3 45 1 1 1 2 1 3 21 6 2 7 1 21 11 2 1 21 11 23 2 $ 2 ( ( % 1 1 1 1 2 2 1 2 3 11 2 1 2 1 1 2 1 1 1 2 1 2 " $ $ ( $ !"# ! $ % & '( ) * + ,-./ , 0 " " "! "# ! 1+# ! % ! 0 #23 #24 #25 ( ( + # 6% 6 7 ! 0!$ 8! # ! 0!, 8 0! ,! 0 +$! '! |
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